型号:

IRF7501TR

RoHS:
制造商:International Rectifier描述:MOSFET DUAL N-CH 20V 2.4A MICRO8
详细参数
数值
产品分类 分离式半导体产品 >> FET - 阵列
IRF7501TR PDF
产品目录绘图 IR Hexfet Micro-8
IR Hexfet 8-SOIC
标准包装 1
系列 HEXFET®
FET 型 2 个 N 沟道(双)
FET 特点 逻辑电平门
漏极至源极电压(Vdss) 20V
电流 - 连续漏极(Id) @ 25° C 2.4A
开态Rds(最大)@ Id, Vgs @ 25° C 135 毫欧 @ 1.7A,4.5V
Id 时的 Vgs(th)(最大) 700mV @ 250µA
闸电荷(Qg) @ Vgs 8nC @ 4.5V
输入电容 (Ciss) @ Vds 260pF @ 15V
功率 - 最大 1.25W
安装类型 表面贴装
封装/外壳 8-TSSOP,8-MSOP(0.118",3.00mm 宽)
供应商设备封装 Micro8?
包装 剪切带 (CT)
产品目录页面 1523 (CN2011-ZH PDF)
其它名称 *IRF7501TR
IRF7501
IRF7501CT
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